Large-Signal Microwave Characterization of AlGaAs/GaAs HBTÆs Based on a Physics-Based Electrothermal - Microwave Theory and Techniques, IEEE Transactions on
نویسنده
چکیده
A physics-based multicell electrothermal equivalent circuit model is described that is applied to the large-signal microwave characterization of AlGaAs/GaAs HBT’s. This highly efficient model, which incorporates a new multifinger electrothermal model, has been used to perform dc, small-signal and loadpull characterization, and investigate parameter-spreads due to fabrication process variations. An enhanced Newton algorithm is presented for solving the nonlinear system of equations for the model and associated circuit simulator, which allows a faster and more robust solution than contemporary quasi-Newton nonlinear schemes. The model has been applied to the characterization of heterojunction bipolar transistor (HBT) microwave power amplifiers.
منابع مشابه
Large-Signal Microwave Characterization of AlGaAs/GaAs HBTs based on a Physics-Based Electro-Thermal Model
A physics-based multi-cell electro-thermal equivalent circuit model is described which is applied to the large-signal microwave characterization of AlGaAs/GaAs HBTs. This highly efficient model, which incorporates a new multi-finger electro-thermal model, has been used to perform DC, small-signal and load-pull characterization and investigate parameter-spreads due to fabrication process variati...
متن کاملAsymmetrically Shaped Pseudomorphic Modulation Doped Structure for Microwave Detection
In this paper we propose a microwave detector based on a AlGaAs/ InGaAs/GaAs structure. Its operation relies on non-uniform carrier heating of the two-dimensional electron gas in the microwave electric fields which is a result of the asymmetric shape of the device fabricated on the base of pseudomorphic modulation doped AlGaAs/InGaAs/GaAs structure. The voltage sensitivity of the device at nitr...
متن کاملMultitone Frequency-Domain Simulation of Nonlinear Circuits in Large- and Small-Signal Regimes - Microwave Theory and Techniques, IEEE Transactions on
Computer simulation of general microwave nonlinear circuits excited by a large number of input tones is addressed. The algorithm, based on the spectral-balance method, uses novel index-vector and convolution-matrix generation techniques. That, in conjunction with a new nonlinear-device modeling approach (which directly takes into account the higher order derivatives of the I=V and Q=V character...
متن کاملDual-Heterojunction High Electron Mobility Transistors on GaAs Substrate
The high electron mobility transistors (HEMT’s) in general and AlGaAs/GaAs/AlGaAs dualheterojunction high electron mobility transistors (DHHEMT) specifically have been studied in this paper. These devices show superior characteristics over other types of FET’s for high frequency microwave power applications. The structure of a heterojunction have been discussed followed by two and multiple-chan...
متن کاملHigh-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers
High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...
متن کامل